Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes

被引：8
|
作者：
Kim, Min Gee [1 ]
Kataoka, Masakazu [1 ]
Mailig, Rengie Mark D. [1 ]
Ohmi, Shun-ichiro [1 ]
机构：
[1] Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2020年 / E103C卷 / 06期
关键词：
ferroelectrics; nondoped HfO2; MFSFET; nonvolatile memory; FILMS; SEMICONDUCTOR; BEHAVIOR; IMPACT; ZRO2; FET;
D O I：
10.1587/transele.2019FUP0005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ferroelectric gate field-effect transistors (MFSFETs) were investigated utilizing nondoped HfO2 deposited by RF magnetron sputtering utilizing Hf target. After the post-metallization annealing (PMA) process with Pt top gate at 500 degrees C/30 s, ferroelectric characteristic of 10 nm thick nondoped HfO2 was obtained. The fabricated MFSFETs showed the memory window of 1.7V when the voltage sweep range was from -3 to 3V.
引用
收藏
页码：280 / 285
页数：6
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