Magnetoelectronic device utilizing the Dresselhaus spin-orbit coupling

We propose a ballistic device model which harnesses the Dresselhaus spin-orbit coupling effect to induce spin polarization vertical bar J vertical bar by constraining the transverse electron wave vector k(x) to specific, quantized values and aligning the crystalline c axis along the electron conduction path z. vertical bar P vertical bar induced in this magnetoelectronic device is further enhanced by applying a periodic system of delta magnetoelectric barriers that constitute a net "zero-A" periodic unit. Calculations for GaAs, GaSb, and InSb show a field enhancement of vertical bar P vertical bar from peak 2%-3% to 10%-80% near the conduction band. Magnetic and electric potentials have been shown to modulate vertical bar P vertical bar with few gate elements required. (c) 2005 American Institute of Physics.