Thin film oxide-ion conducting electrolyte for near room temperature applications

被引：9

作者：

Garbayo, Inigo ^{[1
]}

Chiabrera, Francesco ^{[1
]}

Alayo, Nerea ^{[1
]}

Santiso, Jose ^{[2
]}

Morata, Alex ^{[1
]}

Tarancon, Albert ^{[1
,3
]}

机构：

[1] Catalonia Inst Energy Res IREC, Dept Adv Mat Energy Applicat, Jardins Dones Negre 1, Barcelona 08930, Spain

[2] CSIC, Barcelona Inst Sci & Technol, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain

[3] ICREA, Passeig Lluis Companys 23, Barcelona 08010, Spain

来源：

JOURNAL OF MATERIALS CHEMISTRY A | 2019年 / 7卷 / 45期

基金：

欧洲研究理事会;

关键词：

PULSED-LASER DEPOSITION; FUEL-CELLS; ELECTRICAL-CONDUCTIVITY; STABILITY; BI4V2O11; YSZ; MEMBRANES; NI; ME; CU;

D O I：

10.1039/c9ta07632h

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Stabilized bismuth vanadate thin films are presented here as superior oxide ionic conductors, for application in solid state electrochemical devices operating near room temperature. Widely studied in the 90s in bulk form due to their unbeatable ionic conduction, this family of materials was finally discarded due to poor stability above 500 degrees C. Here, we however unveil the possibility of using Bi(4)V(1.)8Cu(0.2)O(10.7) at reduced temperatures in thin film-based devices, where the material keeps its unmatched conduction properties and at the same time shows good stability over a wide oxygen partial pressure range.

引用

页码：25772 / 25778

页数：7

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