Quantum dot resonant cavity light emitting diode operating near 1300nm

被引：25
|
作者：
Gray, JW [1 ]
Childs, D [1 ]
Malik, S [1 ]
Siverns, P [1 ]
Roberts, C [1 ]
Stavrinou, PN [1 ]
Whitehead, M [1 ]
Murray, R [1 ]
Parry, G [1 ]
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Ctr Elect Mat & Devices, London SW7 2BZ, England
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 03期
关键词：
D O I：
10.1049/el:19990114
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first demonstration of resonant cavity enhancement of optical emission from an InAs/GaAs quantum dot light emitting diode is reported. For emission around 1300nm, efficiency enhancements of greater than 10 for low current injection and greater than 3 for higher current injection for light coupled into a multimode optical fibre are observed.
引用
收藏
页码：242 / 243
页数：2
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