Current induced domain wall motion in GaMnAs close to the Curie temperature

被引:8
|
作者
Jeudy, V. [1 ,2 ]
Curiale, J. [1 ,3 ,4 ]
Adam, J-P [1 ]
Thiaville, A. [1 ]
Lemaitre, A. [3 ]
Faini, G. [3 ]
机构
[1] Univ Paris 11, Phys Solides Lab, CNRS, F-91405 Orsay, France
[2] Univ Cergy Pontoise, F-95000 Cergy Pontoise, France
[3] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[4] Consejo Nacl Invest Cient & Tecn, Ctr Atom Bariloche, Comis Nacl Energia Atom, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
关键词
D O I
10.1088/0953-8984/23/44/446004
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Domain wall dynamics produced by spin transfer torques is investigated in (Ga, Mn) As ferromagnetic semiconducting tracks with perpendicular anisotropy, close to the Curie temperature. The domain wall velocities are found to follow a linear flow regime which only slightly varies with temperature. Using the Doring inequality, boundaries of the spin polarization of the current are deduced. A comparison with the predictions of the mean field k . p theory leads to an estimation of the carrier density whose value is compatible with results published in the literature. The spin polarization of the current and the magnetization of the magnetic atoms present similar temperature variations. This leads to a weak temperature dependence of the spin drift velocity and thus of the domain wall velocity. A combined study of field-and current-driven motion and deformation of magnetic domains reveals a motion of domain walls in the steady state regime without transition to the precessional regime. The ratio between the non-adiabatic torque beta and the Gilbert damping factor alpha is shown to remain close to unity.
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页数:6
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