Polaronic Signatures in Doped and Undoped Cesium Lead Halide Perovskite Nanocrystals through a Photoinduced Raman Mode

被引:4
|
作者
Jain, Priyanka [1 ]
Mazumder, Madhulika [1 ,2 ]
Pradeep, K. R. [3 ,4 ]
Viswanatha, Ranjani [3 ,4 ]
Pati, Swapan K. [1 ]
Narayana, Chandrabhas [1 ]
机构
[1] Jawaharlal Nehru Ctr Adv Sci Res JNCASR, Sch Adv Mat, Jakkur 560064, Bengaluru, India
[2] Jawaharlal Nehru Ctr Adv Sci Res JNCASR, New Chem Unit, Theoret Sci Unit, Jakkur 560064, Bengaluru, India
[3] Jawaharlal Nehru Ctr Adv Sci Res JNCASR, New Chem Unit, Sch Adv Mat, Jakkur 560064, Bengaluru, India
[4] Jawaharlal Nehru Ctr Adv Sci Res JNCASR, Int Ctr Mat Sci, Jakkur 560064, Bengaluru, India
关键词
CsPbX3; nanocrystals; Mn-doped CsPbX3; polarons; photoinduced Raman mode; density functional perturbation theory; TOTAL-ENERGY CALCULATIONS; LOCAL-STRUCTURE; CSPBCL3; DYNAMICS; SPECTROSCOPY; STABILITY; CARRIER;
D O I
10.1021/acsami.1c20321
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Lead halide perovskites (LHPs) are promising candidates for photovoltaic applications as they exhibit large carrier diffusion lengths and long carrier lifetimes among many other interesting properties. One of the widely accepted mechanisms for these properties is polaron formation, which is mainly driven by octahedral distortions of the inorganic framework. Since structure modifications of the framework largely affect associated distortions, we investigated Mn-doped and undoped CsPbX3 (where X = Cl, Br, Cl/Br) using a local probe via micro-Raman spectroscopy and density functional theory (DFT) calculations for polaron formation. Our results highlight a new vibrational lattice mode at 132 cm(-1) due to polaronic distortion upon photoinduction. From the DFT studies, we have shown that the polaronic states are dominated by the B-site cation in the perovskite structure, but it is the strong covalent overlap of the halide which determines its stability. This elucidation to map polaronic signatures with excellent spatial resolution using traditional Raman spectroscopy can be used as a simple tool to understand the structural changes and their impacted electronic properties and thus design superior devices using its in situ applications.
引用
收藏
页码:5567 / 5577
页数:11
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