The effect of surface segregation on the light-emission intensity of Si/SiGe/Si heterostructures

被引：7
|
作者：
Kimura, Y [1 ]
Nakagawa, K [1 ]
Miyao, M [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 02期
关键词：
D O I：
10.1063/1.121765
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The correlation between the light-emission intensity from SiGe: mixed crystals and Ge surface segregation during molecular beam epitaxy has been investigated. Atomic-hydrogen-assisted molecular beam epitaxy was used to vary the surface-segregation length of Ge. Results show that the photoluminescence (PL) intensity was very strong in the region where the surface-segregation length was less than 7 nm. However, when the surface-segregation length exceeded 7 nm, the PL intensity decreased sharply. A one-to-one correspondence between the FL intensity and the Ge segregation length was obtained. This is attributed to the dependence of the surface segregation on the degree of randomness in the SiGe alloy. (C) 1998 American Institute of Physics. [S0003-6951(98)03728-0].
引用
收藏
页码：232 / 234
页数：3
相关论文
共 50 条
  • [1] LIGHT-EMISSION EFFECT IN ANODIC-OXIDATION OF SI
    ZHOU, G
    NAKANISHI, Y
    HATANAKA, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (05) : 1468 - 1471
  • [2] MEASUREMENTS OF AVALANCHE EFFECTS AND LIGHT-EMISSION IN ADVANCED SI AND SIGE BIPOLAR-TRANSISTORS
    ZANONI, E
    BIGLIARDI, S
    PAVAN, P
    PISONI, P
    CANALI, C
    MICROELECTRONIC ENGINEERING, 1991, 15 (1-4) : 23 - 26
  • [3] STM LIGHT-EMISSION SPECTROSCOPY OF SI SURFACES
    USHIODA, S
    SOLID STATE COMMUNICATIONS, 1992, 84 (1-2) : 173 - 176
  • [4] LIGHT-EMISSION FROM HOT CARRIERS IN SI MOSFETS
    HUBLITZ, K
    LYON, SA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B567 - B569
  • [5] SI/SIGE HETEROSTRUCTURES AND DEVICES
    ZHOU, GL
    MORKOC, H
    THIN SOLID FILMS, 1993, 231 (1-2) : 125 - 142
  • [6] Electrical behaviour of Al/SiGe/Si heterostructures:: effect of surface treatment and dislocations
    Horváth, ZJ
    Adám, M
    Szabó, I
    Orlov, LK
    Potapov, A
    Tolomasov, VA
    APPLIED SURFACE SCIENCE, 2004, 234 (1-4) : 54 - 59
  • [7] The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures
    Lin, Xi
    Hu, Jingshi
    Lai, Andrew P.
    Zhang, Zhenning
    MacLean, Kenneth
    Dillard, Colin
    Xie, Ya-Hong
    Kastner, Marc A.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (02)
  • [8] SELECTIVE ETCHING OF SIGE ON SIGE/SI HETEROSTRUCTURES
    CHANG, GK
    CARNS, TK
    RHEE, SS
    WANG, KL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (01) : 202 - 204
  • [9] Diffusion of phosphorus in strained Si/SiGe/Si heterostructures
    Kuznetsov, AY
    Christensen, JS
    Linnarsson, MK
    Svensson, BG
    Radamson, HH
    Grahn, J
    Landgren, G
    SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS, 1999, 568 : 271 - 276
  • [10] Photoelastic waveguides in SiGe/Si heterostructures and bulk Si
    Lea, E
    Weiss, BL
    Rho, H
    Jackson, HE
    MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, 1998, 486 : 95 - 100
12345