All-Dielectric Slot Metasurface with Ultra-High-Q resonances

被引：0
|
作者：
Algorri, J. F. [1 ]
Dell'Olio, F. [2 ]
Roldan-Varona, P. [1 ]
Rodriguez-Cobo, L. [3 ]
Lopez-Higuera, J. M. [1 ,3 ,4 ]
Sanchez-Pena, J. M. [5 ]
Zografopoulos, D. C. [6 ]
机构：
[1] Univ Cantabria, Photon Engn Grp, Santander 39005, Spain
[2] Polytecn Univ Bari, Dept Elect & Informat Engn, I-70125 Bari, Italy
[3] Inst Salud Carlos III, CIBER Bbn, Madrid 28029, Spain
[4] Inst Invest Sanitaria Valdecilla IDIVAL, Santander 39011, Spain
[5] Carlos III Univ, Dept Elect Technol, Madrid 28911, Spain
[6] CNR, Ist Microelettron & Microsistemi CNR IMM, I-00133 Rome, Italy
来源：
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2021年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel all-dielectric metasurface in silicon-on-insulator technology made of arrayed circular slots is proposed and theoretically studied. The metasurface exhibits quasi-bound states in the continuum resonances, having an ultra-high Q-factor up to 5x10(8). (C) 2021 The Author(s)
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页数：2
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