Raman Studies of Silicon Nanocrystals Embedded in Silicon Suboxide Layers

被引：22

作者：

Maslova, N. E. ^{[1
]}

Antonovsky, A. A. ^{[1
]}

Zhigunov, D. M. ^{[1
]}

Timoshenko, V. Yu. ^{[1
]}

Glebov, V. N. ^{[2
]}

Seminogov, V. N. ^{[2
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119991, Russia

[2] Russian Acad Sci, Inst Laser & Informat Technol, Troitsk 142190, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 08期

基金：

俄罗斯基础研究基金会;

关键词：

VOLUME FRACTION; MICROCRYSTALLINE SILICON; FILMS; SPECTRA; CONDUCTIVITY; SPECTROSCOPY; NANOCLUSTERS; SIZE;

D O I：

10.1134/S1063782610080154

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Raman spectroscopy is used for the study of SiO(x)(x approximate to 1) layers subjected to thermal annealing at the temperatures from 950 to 1200 degrees C to form Si nanocrystals inside the layers. From comparison of the experimental data with the model of spatial confinement of phonons, the volume fractions of the crystalline and amorphous Si phases in the layers are determined. It is established that, as the annealing temperature is increased, the average dimensions of Si nanocrystals increase from 4 to 6.5 nm. This is attributed to the coarsening of nanocrystals due to crystallization of the amorphous Si phase and to the processes of coalescence of neighboring nanocrystals at the highest temperatures of annealing.

引用

页码：1040 / 1043

页数：4

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