Organic Light-Emitting Field-Effect Transistor with Channel Waveguide Structure

Organic field-effect transistors with channel waveguide structures were fabricated with thiophene/phenylene co-oligomer thin films. Top-contact source/drain electrodes of gold were deposited onto both side walls of the waveguide by the self-shadow masking vapor deposition technique leaving the co-oligomer channel of similar to 5-mu m-length intact. The device operated as a typical hole-accumulated unipolar transistor under negative gate biases. When alternating-current gate voltages were applied, the device showed light emission due to recombination of injected electrons with accumulated holes in the waveguide channel. (C) 2010 The Japan Society of Applied Physics