Influence of ammoniating temperature on Co-catalyzed GaN nanowires

被引：11
|
作者：
Qin, L. X. [1 ]
Xue, C. S. [1 ]
Zhuang, H. Z. [1 ]
Yang, Z. Z. [1 ]
Li, H. [1 ]
Chen, J. H. [1 ]
Wang, Y. [1 ]
机构：
[1] Shandong Normal Univ, Inst Semicond, Coll Phys & Elect, Jinan 250014, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2008年 / 91卷 / 04期
关键词：
D O I：
10.1007/s00339-007-4358-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaN nanowires (NWS) were synthesized at different temperatures by ammoniating Ga2O3/Co films deposited on Si (111) substrate. X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscope (HRTEM), Fourier transformed infrared spectra (FTIR) and photoluminence (PL) spectra were used to characterize the influences of the ammoniating temperature on the morphology, crystallinity and optical properties of GaN NWS. Our results indicate that the samples are all of wurtzite structure and also show that the GaN NWS ammoniated at 950 degrees C have the best morphology and crystallinity with a single-crystalline structure, and at this temperature the PL spectrum with the strongest ultraviolet (UV) peak is observed.
引用
收藏
页码：675 / 678
页数：4
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