Light-current curve of a tunneling-injection quantum dot laser - art. no. 69020B

被引:0
|
作者
Han, Dae-Seob [1 ]
Asryan, Levon V. [1 ]
机构
[1] Virginia Polytech Inst & State Univ, Blacksburg, VA 24061 USA
关键词
output optical power; quantum dot lasers; semiconductor heterojunctions; tunneling;
D O I
10.1117/12.758414
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The potential for high-power operation of a laser exploiting tunneling-injection of electrons and holes into quantum dots (QDs) from two separate quantum wells (QWs) is studied. An extended theoretical model is developed to account for out-tunneling leakage of carriers from QDs. Even in the presence of out-tunneling from QDs, the parasitic recombination flux outside QDs is shown to remain restricted with increasing injection current; correspondingly, the LCC becomes more and more linear and the slope efficiency closer to unity at high injection currents. The linearity is due to the fact that the current paths connecting the opposite sides of the structure lie entirely within QDs - in view of the three-dimensional confinement in QDs, the out-tunneling fluxes of carriers from dots are limited.
引用
收藏
页码:B9020 / B9020
页数:12
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