In Situ Passivation on Rear Perovskite Interface for Efficient and Stable Perovskite Solar Cells

Despite the rocketing rise in power conversion efficiencies (PCEs), the performance of perovskite solar cells (PSCs) is still limited by the carrier transfer loss at the interface between perovskite (PVSK) absorbers and charge transporting layers. Here, we propose a novel in situ passivation strategy by using [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM) to improve the charge dynamics at the rear PVSK/CTL interface in the n-i-p structure device. A pre-deposited PCBM-doped PbI2 layer is redissolved during PVSK deposition in our routine, establishing a bottom-up PCBM gradient that is facile for charge extraction. Meanwhile, the surface defects are in situ-passivated via PCBM-PVSK interaction, which substantially suppresses the trap-assisted recombination at the rear interface. Due to the synergistic effect of charge-extraction promotion and trap passivation, the fabricated PSCs deliver a champion PCE of 20.10% with attenuated hysteresis and improved long-term stability, much higher than the 18.39% of the reference devices. Our work demonstrates a promising interfacial engineering strategy for further improving the performance of PSCs.