Electronic transport properties on V-shaped-notched zigzag graphene nanoribbons junctions

被引：36
|
作者：
Zhang, Xiao-Jiao [1 ,2 ]
Chen, Ke-Qiu [1 ,2 ]
Tang, Li-Ming [1 ,2 ]
Long, Meng-Qiu [3 ]
机构：
[1] Hunan Univ, Dept Appl Phys, Changsha 410082, Hunan, Peoples R China
[2] Hunan Univ, Minist Educ, Key Lab Micronano Optoelect Devices, Changsha 410082, Hunan, Peoples R China
[3] Cent S Univ, Sch Phys Sci & Technol, Inst Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China
来源：
PHYSICS LETTERS A | 2011年 / 375卷 / 37期
基金：
高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词：
Graphene nanoribbons; V-shaped notch; First-principles; Electronic transport properties; EDGE; CONDUCTANCE; DEPENDENCE;
D O I：
10.1016/j.physleta.2011.07.029
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Using nonequilibrium Green's functions in combination with the density functional theory, the spin-dependent electronic transport properties on V-shaped notched zigzag-edged graphene nanoribbons junctions have been calculated. The results show that the electronic transport properties are strongly depending on the type of notch and the symmetry of ribbon. The spin-filter phenomenon and negative differential resistance behaviors can be observed. A physical analysis of these results is given. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：3319 / 3324
页数：6
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