Si 2p and O 1s photoemission from oxidized Si(0 01) surfaces depending on translational kinetic energy of incident O2 molecules (vol 190, pg 75, 2002)

被引：0

作者：

Teraoka, Yuden ^{[1
]}

Yoshigoe, Akitaka ^{[1
]}

机构：

[1] Japan Atom Energy Agcy, Synchrotron Radiat Res Ctr, Mikazuki, Hyogo 6795148, Japan

来源：

APPLIED SURFACE SCIENCE | 2015年 / 343卷

关键词：

D O I：

10.1016/j.apsusc.2015.02.146

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：212 / 212

页数：1

共 22 条

[1] Si 2p and O 1s photoemission from oxidized Si(001) surfaces depending on translational kinetic energy of incident O2 molecules
Teraoka, Y
Yoshigoe, A
APPLIED SURFACE SCIENCE, 2002, 190 (1-4) : 75 - 79
[2] Photoemission spectroscopic study on influence of O2 translational kinetic energy for Si(001) initial oxidation (vol 507, pg 797, 2002)
Teraoka, Yuden
Yoshigoe, Akitaka
SURFACE SCIENCE, 2015, 637 : 156 - 156
[3] Precise Control of Si(001) Initial Oxidation by Translational Kinetic Energy of O2 Molecules (vol 41, 4253, 2002)
Teraoka, Yuden
Yoshigoe, Akitaka
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (03)
[4] Photoemission spectroscopic study on influence of O2 translational kinetic energy for Si(001) initial oxidation
Teraoka, Y
Yoshigoe, A
SURFACE SCIENCE, 2002, 507 : 797 - 802
[5] Precise control of Si(001) initial oxidation by translational kinetic energy of O2 molecules
Teraoka, Y
Yoshigoe, A
MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS, 2001, : 108 - 109
[6] Precise control of Si(001) initial oxidation by translational kinetic energy of O2 molecules
Teraoka, Y
Yoshigoe, A
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (6B): : 4253 - 4260
[7] Time resolved photoemission spectroscopy on Si(001)-2 x 1 surface during oxidation controlled by translational kinetic energy of O2 at room temperature (vol 532, pg 690, 2003)
Teraoka, Yuden
Yoshigoe, Akitaka
SURFACE SCIENCE, 2015, 637 : 158 - 158
[8] Time resolved photoemission spectroscopy on Si(001)-2 x 1 surface during oxidation controlled by translational kinetic energy of O2 at room temperature
Yoshigoe, A
Teraoka, Y
SURFACE SCIENCE, 2003, 532 : 690 - 697
[9] Effect of incident translational energy and surface temperature on the sticking probability of F2 and O2 on Si(100)-2×1 and Si(111)-7×7
J Phys Chem, 34 (12863):
[10] Kinetic energy released distributions of ions desorbed from H2O/Si(100) adsorption system by O 1s excitation
Sekiguchi, T
Ikeura, H
Tanaka, K
Obi, K
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1996, 80 : 65 - 68

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