Reliability of Au-Ag Alloy Wire Bonding

被引：12

作者：

Liu, Hai ^{[1
]}

Chen, Qi ^{[1
]}

Zhao, Zhenqing ^{[1
]}

Wang, Qian ^{[1
]}

Zeng, Jianfeng ^{[1
]}

Chae, Jonghyun ^{[1
]}

Lee, Jaisung ^{[1
]}

机构：

[1] Samsung Semicond China R&D CO Ltd, Suzhou 215021, Peoples R China

来源：

2010 PROCEEDINGS 60TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2010年

关键词：

D O I：

10.1109/ECTC.2010.5490906

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Au-Ag alloy wire is a low cost wire bonding solution instead of gold wire for IC packaging. Comparing with copper wire, Au-Ag wire has better productivity because it does not need protective gas and it is softer. The main issue of Au-Ag alloy wire bonding is its reliability in humidity environment. In present study, the bond parameters effect on PCT reliability was investigated. The correlation between the IMC profile and PCT lifetime was established. The IMC characteristic length was defined to express the relationship quantitatively. Meanwhile, The Au-Ag-Al IMC growth equation was obtained through HTS. It is found that the IMC growth rate is slower one order of magnitude than 99.99% gold wire.

引用

页码：234 / 239

页数：6

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