A multiband inductor-reuse CMOS low-noise amplifier

被引:18
|
作者
Tzeng, Fred [1 ]
Jahanian, Amin [1 ]
Heydari, Payam [1 ]
机构
[1] Univ Calif Irvine, Dept Elect Engn & Comp Sci, NCIC Lab, Irvine, CA 92697 USA
关键词
CMOS; low-noise amplifier (LNA); inductor reuse; multiband; multistandard; wireless local area network (WLAN);
D O I
10.1109/TCSII.2008.918922
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design and implementation of a new multiband, multistandard CMOS low-noise amplifier (LNA) that reuses inductors for different frequency bands to minimize chip area. The idea is to adaptively reconfigure a CMOS transistor in either common source or common gate configuration to achieve narrow-band (NB) or wide-band (WB) input matching, respectively, while conveniently reusing input and load inductors for both bands. This architecture is suitable for 802.11 a/b/g and Public Safety Broadband (PSB) applications, where the NB configuration covers wireless local area network (WLAN) 802.11b/g, while the WB configuration accommodates the PSB at 4.9 GHz and WLAN 802.11a. Two versions of the proposed idea, a tapped-capacitor and a tapped-inductor input-matched LNA, have each been designed and fabricated in 0.13-mu m CMOS and measurement results are demonstrated.
引用
收藏
页码:209 / 213
页数:5
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