Cathodoluminescence of GaN doped with Sm and Ho

被引：36
|
作者：
Lozykowski, HJ [1 ]
Jadwisienczak, WM
Brown, I
机构：
[1] Ohio Univ, Sch Elect Engn Comp Sci & Condensed Matter, Surface Sci Program, Stocker Ctr, Athens, OH 45701 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[3] Nicholas Copernicus Univ, Lab Solid State Optoelect, Inst Phys, PL-87400 Torun, Poland
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 110卷 / 05期
关键词：
semiconductors; impurities in semiconductors; optical properties; luminescence;
D O I：
10.1016/S0038-1098(99)00077-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report the first observation of visible cathodoluminescence of the rare earth (RE) elements Sm, Ho implanted in GaN. The implanted samples were given isochronal thermal annealing treatments at a temperature of 1100 degrees C in N-2, at atmospheric pressure to recover implantation damages and activate the RE ions. The sharp characteristic emission lines corresponding to Sm3+ and Ho3+ intra-4f(n)-shell transitions are resolved in the spectral range from 400 to 1000 nm, and observed over the temperature range of 11-411 K. The cathodoluminescence emission is only weakly temperature dependent. The results indicate that RE doped GaN epilayers are suitable as a material for visible optoelectronic devices. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：253 / 258
页数：6
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