FeTaN/IrMn exchange-coupled multilayer films as soft underlayers for perpendicular media

被引:38
|
作者
Jung, HS [1 ]
Doyle, WD
机构
[1] Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA
[2] Univ Alabama, Mat Sci Program, Tuscaloosa, AL 35487 USA
[3] Univ Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
关键词
exchange-coupled multilayers; perpendicular media; soft underlayers;
D O I
10.1109/20.951152
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Soft underlayers of FeTaN/IrMn exchange-coupled films for perpendicular media have been investigated. FeTaN(t(FeTaN))/IrMn(10 mn) multilayer films having different FeTaN thicknesses t(FeTaN) from 20 nm to 200 mn were prepared while keeping the total FeTaN thickness at 200 nm. When t(FeTaN) decreased below 100 mn to 20 run, the exchange bias field increased from 3.6 Oe to 77 Oe, and the pinning field from 25 Oe to 105 Oe. The interfacial exchange energy, J, was 0.10 similar to0.13 ergs/cm(2). As the exchange bias field increased, the angular reversibility increased from 10 degrees to 57 degrees in good agreement with the coherent rotational model. Radially oriented multilayer films of FeTaN (20 nm)/[IrMn(10 mn)/FeTaN(20 nm)](9) were successfully prepared on 65 mm disks and showed excellent angular reversibility, a pinning field > 70 Oe, and a permeability of 70 up to 2 GHz.
引用
收藏
页码:2294 / 2297
页数:4
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