Characterization of thin SiO2 on Si by spectroscopic ellipsometry, neutron reflectometry, and x-ray reflectometry

We compare the results of neutron reflectometry, x-ray reflectometry, and spectroscopic ellipsometry measurements of a thin oxide film (approximate to 10 nm). These methods, which arise from three physically different scattering mechanisms, each determine physical properties of the film, and each has its distinctive strengths. This comparison of the extracted depth profiles of the physical properties gives multiple perspectives on the thickness and interfacial characteristics of an SiO2 film on Si. This information improves our understanding of the material system and is helpful for refining the models used to analyze similar structures. The extracted thickness of the SiO2 film is in agreement for these three methods.