Selective optical pumping of charged excitons in unintentionally doped InAs quantum dots

被引:16
|
作者
Munoz-Matutano, Guillermo [1 ]
Alen, Benito [2 ]
Martinez-Pastor, Juan [1 ]
Seravalli, Lucca [3 ]
Frigeri, Paola [3 ]
Franchi, Secondo [3 ]
机构
[1] Univ Valencia, Inst Ciencias Mat, Valencia 46071, Spain
[2] CSIC, CNM, Inst Microelect Madrid, Madrid 28760, Spain
[3] CNR, Inst Mat Elettron & Magnetismo, I-43100 Parma, Italy
关键词
D O I
10.1088/0957-4484/19/14/145711
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have investigated the selective optical pumping of charged excitonic species in a sample containing quantum dots of different sizes and low areal density by photoluminescence and excitation of the photoluminescence microspectroscopy. We study the selective optical excitation of negatively charged excitons as an alternative to commonly used electrical methods. We demonstrate that under resonant excitation in impurity related bands, the selective pumping efficiency can be as high as 85% in small quantum dots having one electron shell and emitting at around 930 nm, and around 65% in big quantum dots having four electron shells and emitting at 1160 nm.
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页数:6
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