Barriers to electron extraction in polymer light-emitting diodes

被引：79
|
作者：
Murata, K
Cinà, S
Greenham, NC
机构：
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Cambridge Display Technol, Cambridge CB3 0HJ, England
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 08期
关键词：
D O I：
10.1063/1.1396627
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the performance of single-layer polymer light-emitting diodes based on a polyfluorene derivative. Hole-only devices show low currents; however, double-carrier devices show high currents and high efficiencies, implying that the presence of electrons in the device enhances hole injection. By numerical modeling, we show that this behavior is consistent with the presence of a barrier to electron extraction at the anode which causes an increased field for hole injection due to the buildup of electrons at the barrier. (C) 2001 American Institute of Physics.
引用
收藏
页码：1193 / 1195
页数：3
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