Performance evaluation of the metal induced lateral crystallization (MILC)poly-Si1-XGeX thin films for optoelectronic applications

被引：0
|
作者：
Chen, CY [1 ]
Hsiao, R [1 ]
Ho, JJ [1 ]
机构：
[1] Fortune Inst Technol, Dept Comp Sci & Informat Engn, Chishan, Kaohsiung, Taiwan
来源：
8TH WORLD MULTI-CONFERENCE ON SYSTEMICS, CYBERNETICS AND INFORMATICS, VOL XII, PROCEEDINGS: APPLICATIONS OF CYBERNETICS AND INFORMATICS IN OPTICS, SIGNALS, SCIENCE AND ENGINEERING | 2004年
关键词：
poly-Si1-XGeX; thin film; metal induced lateral crystallization (MILC); porous silicon; heteroepitaxy;
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In this report, both oxidized undoped c-Si (100) wafer and conventional glass were used as the substrate for a-Si1-xGex:H film deposition. The silicon sibstrate is selected for the sake of scanning electron microscopy (SEM) analysis. By annealing treated at 400 degrees C, the a-Si1-xGex:H film by Au induced shows a very fast crystallization rate (15.1 similar to 15.9 mu m/hr) and the optimal MILC lengths can be obtained for a time required. Based on this project, MILC by Au induced is a suitable technology to low temperature fabrication of poly-Si1-xGex:H TFT on glass substrate for the low cost IC applications.
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页码：243 / 247
页数：5
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