Design and investigation of a novel silicon/ferroelectric hybrid electro-optical microring modulator

A silicon (Si) and lanthanum-doped lead zirconium titanate (PLZT) hybrid microring modulator based silicon-on-insulator (SOH platform is designed theoretically and investigated numerically in this paper. heterogeneous integration of PLZT film with Si material enables the waveguide to acquire both excellent optical property and strong mode confinement capacity. Such hybrid microring modulator (100 gm in radius has a PLZT rib-loaded cladding and is integrated with optimized tuning electrodes. The simulation demonstrated that the Si/PLZT hybrid microring modulator could operate at 14 GHz with a relative hig modulation efficiency (< 0.8 V cm), which is much better than the other proposed Si/ferroelectric modulator: Meanwhile, under a driving voltage of 20 V, our modulator exhibits an extinction ratio of 32 dB at 1550.22 wavelength and a resonant wavelength tunability of 25 pm/V for TE mode. With these outstandin performances, the Si/PLZT hybrid microring modulator holds a great potential as a reliable on-chip devic for optical communications and links.