Pressure Dependence of Exciton Binding Energy in GaN/AlxGa1-xN Quantum Wells

被引：5
|
作者：
Bardyszewski, W. [1 ]
Lepkowski, S. P. [2 ]
Teisseyre, H. [2 ,3 ]
机构：
[1] Univ Warsaw, Inst Theoret Phys, Fac Phys, PL-00681 Warsaw, Poland
[2] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland
[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
ACTA PHYSICA POLONICA A | 2011年 / 119卷 / 05期
关键词：
PIEZOELECTRIC FIELD;
D O I：
10.12693/APhysPolA.119.663
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present a theoretical study of excitons in GaN/AlxGa1-xN wurtzite (0001) quantum wells subjected to hydrostatic pressure. Our results show that the combined effect of pressure induced changes in band structure and piezoelectric field leads to reduction of the exciton binding energy. This subtle effect is described quite accurately by our multiband model of excitons in quantum wells.
引用
收藏
页码：663 / 665
页数：3
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