Thermodynamic modeling of the V-Si-B system

被引:12
|
作者
Araujo Pinto da Silva, Antonio Augusto [1 ]
Chaia, Nabil [2 ]
Ferreira, Flavio [3 ]
Coelho, Gilberto Carvalho [2 ]
Fiorani, Jean-Marc [4 ]
David, Nicolas [4 ]
Vilasi, Michel [4 ]
Nunes, Carlos Angelo [2 ]
机构
[1] Univ Fed Itajuba UNIFEI, IEM, Itajuba, MG, Brazil
[2] Univ Sao Paulo, EEL, Lorena, SP, Brazil
[3] Univ Fed Fluminense, Escola Engn Ind Met Volta Redonda, Volta Redonda, RJ, Brazil
[4] Univ Lorraine, IJL, Vandoeuvre Les Nancy, France
关键词
Phase diagram; Thermodynamic modeling; CALPHAD; V-Si-B; RICH CORNER; PHASE; ENTHALPIES; DIBORIDES; STABILITY; TI;
D O I
10.1016/j.calphad.2017.10.001
中图分类号
O414.1 [热力学];
学科分类号
摘要
In the present work, the V-Si-B ternary system was thermodynamically modeled using the CALPHAD method. The thermodynamic descriptions of the V-Si and B-Si binary systems were taken from literature while the parameters of binary V-B were re-evaluated, based on new experimental information. The ternary thermodynamic description was based on experimental data of isothermal section and liquidus projection. The binary compounds V3B2, VB, V5B6, V3B4, V2B3 and VB2 were modeled as stoichiometric phases; the terminal solid solutions BCC and beta-Rhomb were modeled using the sublattice models (V,Si)(1)(B,va)(3) and (B)(93)(B, Si)(12); the ternary phases D8(8) and T-2 were modeled as (V)(0.5556)(B,Si)(0.3333)(B,va)(0.1111) and (V)(0.625)(B,Si)(0.375), respectively. A set of thermodynamic parameters is proposed and the results showed a good agreement with available experimental information from the literature.
引用
收藏
页码:199 / 206
页数:8
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