Decay rates of exciton and phonon-assisted recombination in asymmetric GaAs/AlAs type II superlattices

被引：2
|
作者：
Sulaimanov, AK [1 ]
Braginsky, LS [1 ]
Gilinsky, AM [1 ]
Toropov, AI [1 ]
Bakarov, AK [1 ]
Zhuravlev, KS [1 ]
机构：
[1] Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
APPLIED SURFACE SCIENCE | 2003年 / 216卷 / 1-4期
关键词：
superlattices; direct/inverted interface; interface roughness; exciton recombination; luminescence kinetics; decay rate;
D O I：
10.1016/S0169-4332(03)00475-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Photoluminescence (PL) kinetics of X-xy and X-z excitons at the direct (AlAs-on-GaAs) and inverted (GaAs-on-AlAs) interfaces of asymmetric GaAs/AlAs (1 0 0) type II superlattices (SL) has been investigated. The kinetics of no phonon excitonic recombination is shown to be non-exponential. On the contrary, the kinetics of the phonon replicas follows an exponential law I(t) proportional to exp(-w(ph)t), where w(ph) for the inverted interface is about 1.4 times larger than that for the direct interface. The mean height and lateral size of roughness at the direct and inverted interfaces have been estimated from these data. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：625 / 629
页数：5
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