Conductivity to first SBD of a stress induced leakage path in ultrathin thermal oxides

被引：0
|
作者：
Xu, MZ [1 ]
Tan, CH [1 ]
He, YD [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词：
dielectric breakdown; gate oxide; MOS devices; reliability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The properties of defect current at first SBD is studied tinder constant voltage stress (CVS). It is experimentally shown that the logarithm of the conductivity- as well as time-to-breakdown follows a reciprocal temperature dependence and a single path conductivity- and tirne-to-breakdown are also strongly correlated. and obey a simple reci-symmetrical law.
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页码：777 / 780
页数：4
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