Simulation of self-heating and contact resistance influences on nMOSFETs

The lattice heat equation and the Schottky contact model were implemented in a device simulator to evaluate influences of self-heating on inversion layer mobility mu (inv) and contact resistance R-co in scaled-down nMOSFETs. It is shown that the self-heating degrades mu (inv) and reduces R-co of source/drain silicide, As ambient temperature T-amb increases, the degradation of mu (inv) becomes more pronounced, because of the different contribution of the temperature dependence of the phonon scattering in the mu (inv) model, Conversely, the reduction of R-co by the self-heating becomes more pronounced as T-amb decreases.