A Dual-Axis Resonant Accelerometer Based on Electrostatic Stiffness Modulation in Epi-Seal Process

被引:10
|
作者
Shin, Seungyong [1 ]
Wen, Haoran [1 ]
Kwon, Hyun-Keun [2 ]
Vukasin, Gabrielle D. [2 ]
Kenny, Thomas W. [2 ]
Ayazi, Farrokh [1 ]
机构
[1] Georgia Inst Technol, Atlanta, GA 30332 USA
[2] Stanford Univ, Stanford, CA 94305 USA
来源
关键词
dual-axis resonant accelerometer; wide bandwidth; micro-gravity accelerometer; electrostatic stiffness modulation;
D O I
10.1109/sensors43011.2019.8956601
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the implementation of a novel vacuum-encapsulated dual-axis resonant accelerometer utilizing electrostatic stiffness modulation. Novel flexure designs are used to enable fully-decoupled in-plane dual-axis translational motions of the proof-mass to achieve low cross-axis sensitivity with the translational mode frequencies above 20 kHz for high bandwidth applications. Differential frequency readout scheme mitigates the temperature effects on frequency stability of resonators and reduces off-axis sensitivity. The fabricated device measures a scale factor of 22Hz/g (119ppm/g) with low cross-axis sensitivity. The accelerometer demonstrates high performance with 18 mu g/root Hz VRW and 27 mu g BI in ambient environment. Optimization of the oscillator circuits and implementation of chip-level ovenization can further improve the performance of the design, with potentials to reach sub-mu g performance for emerging high-bandwidth application.
引用
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页数:4
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