A shallow state in molecular beam epitaxial grown CuGaSe2 film detectable by 1.62 eV photoluminescence

被引：32
|
作者：
Yamada, A
Fons, P
Niki, S
Shibata, H
Obara, A
Makita, Y
Oyanagi, H
机构：
[1] Electrotechnical Laboratory, Tsukuba, Ibaraki 305
来源：
JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 06期
关键词：
D O I：
10.1063/1.363936
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Cu-rich CuGaSe2 films grown on [001] oriented GaAs substrates by molecular beam epitaxy show a remarkable low temperature photoluminescence emission peaked at 1.620 eV. This emission can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. The ionization energies of these states are found to be 3.4 and 108 meV, respectively, via temperature dependent photoluminescence. The 108 meV state is attributed to a donor and the 3.4 meV state to an acceptor state observed. (C) 1997 American Institute of Physics.
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收藏
页码：2794 / 2798
页数：5
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