Electron transport in single and multicomponent n-type oxide semiconductors

被引：22
|
作者：
Martins, R. [1 ,2 ]
Barquinha, P. [1 ,2 ]
Pimentel, A. [1 ,2 ]
Pereira, L. [1 ,2 ]
Fortunato, E. [1 ,2 ]
Kang, D. [3 ]
Song, I. [3 ]
Kim, C. [3 ]
Park, J. [3 ]
Park, Y. [3 ]
机构：
[1] Univ Nova Lisboa, Fac Sci & Technol, CENIMAT, Dept Mat Sci, P-2892516 Caparica, Portugal
[2] Univ Nova Lisboa, CEMOP UNINOVA, P-2892516 Caparica, Portugal
[3] Samsung Adv Inst Tech, Nano Devices Lab, Seoul, South Korea
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 07期
关键词：
oxides; conductivity; nanostructures; electrical properties; order and disorder semiconductors;
D O I：
10.1016/j.tsf.2007.03.158
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electron transport in n-type polycrystalline zinc oxide, nanocrystalline Zinc-Gallium-Oxygen and amorphous Indium-Zinc-Oxygen systems produced by rf magnetron sputtering at room temperature, under different oxygen partial pressure were investigated. It was found that the carrier transport is not band tail limited, being governed by metal cations irrespective to the film's structure. The highest net room temperature electron mobility was achieved on the amorphous films and noticed that for the single component oxides the mobility decreases as the carrier concentration increases, while the reverse behaviour was observed for the multicomponent oxides, independently of their structure. These behaviours are related to the role that negative charge defects in excess of 10(10) cm(-2) generated on multicomponent oxides have on carriers scattering and so on their electronic performances. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1322 / 1325
页数：4
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