X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering

被引：0
|
作者：
Xiong, R [1 ]
Shi, J
机构：
[1] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
[2] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2005年 / 21卷 / 04期
关键词：
TixAl1-xN films; X-ray photoelectron spectroscopy; core-electron spectrum;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
TixAl1-xN films have been prepared by RF reactive magnetron sputtering. X-ray diffraction results showed that TixAl1-xN thin films in this study were hexagonal wurtzite structure with the Ti content up to 0.18. X-ray photoelectron spectrocopy studies provided that the N1s core-electron spectrum of TixAl1-xN thin film brodend with increasing Ti content, and the difference of the chemical shifts for Ti2p(3/2) line between TiN and TixAl1-xN thin film was 0.7 eV.
引用
收藏
页码：541 / 544
页数：4
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