Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate

被引：8

作者：

Isobe, Yasuhiro ^{[1
]}

Ikki, Hiromichi ^{[1
]}

Sakakibara, Tatsuyuki ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Akasaki, Isamu ^{[1
,3
]}

Sugiyama, Takayuki ^{[2
]}

Amano, Hiroshi ^{[2
,3
]}

Imade, Mamoru ^{[4
]}

Kitaoka, Yasuo ^{[4
]}

Mori, Yusuke ^{[4
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

[4] Osaka Univ, Grad Sch Elect Engn, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 06期

关键词：

FE-DOPED GAN; VAPOR-PHASE EPITAXY; NA FLUX METHOD;

D O I：

10.1143/APEX.4.064102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated and characterized nonpolar a-plane AlGaN/GaN heterostructure field-effect transistors (HFETs) grown on an a-plane freestanding GaN substrate. By optimizing the growth conditions, the unintentionally doped oxygen concentration was much reduced in the a-plane GaN buffer layer. As a result, the low leakage current in the buffer layer was realized without doping of deep acceptors, such as Fe and C, by which an impurity-contamination-free channel layer can be successfully grown. A maximum drain current of 220 mA/mm at a gate source voltage of +3.0 V, an on resistance of 10.4 m Omega.cm(2), and a threshold voltage of -1.6 V were realized. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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