High Efficiency DC-DC Converter Using GaN Transistors

被引：0

作者：

Tamas, Cosmin-Andrei ^{[1
]}

Grecu, Cristian ^{[2
]}

Pantazica, Mihaela ^{[3
]}

Marghescu, Ion ^{[1
]}

机构：

[1] Univ Politehn Bucuresti, Fac Elect Telecommun & Informat Technol, Dept Telecommun, Bucharest, Romania

[2] Univ Politehn Bucuresti, Fac Elect Telecommun & Informat Technol, Dept Elect Devices & Circuits, Bucharest, Romania

[3] Politehn Univ Bucharest UPB CETTI, Ctr Technol Elect & Interconnect Tech, Bucharest, Romania

来源：

ADVANCED TOPICS IN OPTOELECTRONICS, MICROELECTRONICS, AND NANOTECHNOLOGIES VII | 2015年 / 9258卷

关键词：

GaN transistor; switching power supplies; SiC diode; isolated full bridge converter;

D O I：

10.1117/12.2070029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presents a new high-efficiency power switching supply using the Gallium Nitride (GaN) technology. There are compared two solutions, the first using standard MOS transistors and the second using the new GaN transistor. The actual green technologies for obtaining the maximum energy and minimum losses have pushed the semiconductor industry into a continuous research regarding high power and high frequency devices, having uses in both digital communications and switching power supplies.

引用

页数：6

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