On-chip replication of high-sag microoptical components fabricated by direct laser writing

被引:3
|
作者
Asselin, D [1 ]
Topart, P [1 ]
Sheng, LY [1 ]
Cayer, M [1 ]
Leclair, S [1 ]
Wang, M [1 ]
Jerominek, H [1 ]
机构
[1] INO, Ste Foy, PQ G1P 4S4, Canada
关键词
direct laser writing; MOEMS; thick photoresist; high-sag microlenses; microoptical bench;
D O I
10.1117/12.591719
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This paper describes the fabrication of very high-sag (up to 42 mu m) microlenses by direct laser writing and their integration onto a simple microoptical bench processed by conventional micro fabrication technologies pertaining to MOEMS. At the heart of such a work is INO's laser writer. It is based on a He-Cd laser operating at 442 nm whose intensity can be modulated up to 1024 levels, and on a 40 nm accuracy X-Y translation stage. Laser writing into thick photoresist layers introduces however particular problems in terms of the roughness achievable. Simulations show that the writing beam diameter, the line-to-line spacing and the translation stage accuracy contribute to some unavoidable residual roughness. By applying optimized laser writing parameters, arrays of I x 5 aspherical microlenses were fabricated in a thick positive photoresist, along with alignment marks concurrently generated for on-chip alignment purposes. The microlenses were successfully integrated with a microoptical bench by first generating a UV-transparent mold from the photoresist laser written master. The microlenses imprinted in the mold were then replicated in a layer of hybrid glass material cast on the microoptical bench by UV-embossing with a modified MA6 mask aligner. The uniformity of focal lengths was approximately 3% as determined from best fits of profilometric traces. The replication with alignment of this array in a hybrid glass material was demonstrated on a 12 mm x 12 mm microoptical bench chip. An alignment accuracy of less than 5 mu m was obtained. The replication error was less than about 4%. The measured surface roughness was 50-60 nm RMS, in good agreement with simulation results.
引用
收藏
页码:222 / 232
页数:11
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