Relation of crack-induced current shunting to transport current and n-value in DyBCO-coated superconductor

被引：19
|
作者：
Ochiai, S. [1 ]
Okuda, H.
Arai, T.
Nagano, S.
Sugano, M. [2 ]
Osamura, K. [3 ]
Prusseit, W. [4 ]
机构：
[1] Kyoto Univ, Grad Sch Engn, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
[2] High Energy Accelerator Res Org KEK, Cryogen Sci Ctr, J PARC Ctr, Tokai, Ibaraki 3191106, Japan
[3] Res Inst Appl Sci, Sakyo Ku, Kyoto 6068202, Japan
[4] THEVA Dunnschichttech GmbH, D-85737 Ismaning, Germany
来源：
CRYOGENICS | 2011年 / 51卷 / 10期
关键词：
Superconductors; Critical current density; Stress effects; TAPES;
D O I：
10.1016/j.cryogenics.2011.08.003
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Transport current and n-value of DyBCO-coated conductor pulled in tension were measured experimentally and their relation to crack-induced current shunting was analyzed with the partial crack-current shunting model. The following features were revealed. The shunting current increases with increasing transport current and with increasing crack size. At low voltage where shunting current is low, the transport current of cracked sample normalized with respect to the transport current in non-cracked state is described with the modified ratio of non-cracked area to overall cross-sectional area of superconducting layer. At high voltage where the shunting current is high, the normalized transport current becomes higher than the modified ratio of non-cracked area. The increase in shunting current with transport current (and voltage) leads to a decrease in n-value at high current (voltage). This phenomenon is enhanced by crack extension. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：584 / 590
页数：7
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