Using two-dimensional structures to model filamentation in semiconductor devices

被引：3
|
作者：
Hower, P [1 ]
Pendharkar, S [1 ]
Steinhoff, R [1 ]
Brodsky, J [1 ]
Devore, J [1 ]
Grose, W [1 ]
机构：
[1] Texas Instruments Inc, Merrimack, NH 03054 USA
来源：
ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年
关键词：
D O I：
10.1109/ISPSD.2001.934635
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：385 / 388
页数：4
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