cInvestigation of ICP etching of CVD diamond film

被引:0
|
作者
Chao, Choung-Lii [1 ]
Chou, Wen-Chen [1 ]
Chien, Chun-Yu [1 ]
Ma, Kung-Jenn [2 ]
Lin, Hung-Yi [3 ]
Wu, Tung-Chuan [3 ]
机构
[1] Tamkang Univ, Dept Mech & Electromech Engn, Tamsui 251, Taipei Hsien, Taiwan
[2] Chung Hua Univ, Dept Mech Engn, Hsinchu, Taiwan
[3] Ind Technol Res Inst, Mech & Syst Res Labs, Hsinchu 310, Taiwan
来源
JOURNAL OF THE CHINESE SOCIETY OF MECHANICAL ENGINEERS | 2007年 / 28卷 / 02期
关键词
ICP; atmospheric pressure air plasma; CVD diamond film;
D O I
暂无
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
CVD diamond film possesses many outstanding physical and mechanical properties which make it a very important engineering material. However, high hardness value and extreme brittleness have made CVD diamond film a very difficult material to be machined by conventional grinding and polishing process. To solve the problem, there have been many researches focused on improving the surface roughness of the as-grown CVD diamond film by various approaches. The atmospheric pressure air plasma (APAP), in conjunction with the inductive coupling plasma (ICP) was used in the present study to etch and smooth the CVD diamond film. The results showed that the APAP could activate the top layer of the diamond film which made it easy to react with the reactant gases and to be removed during the subsequent ICP process. Though little differences were observed between the micro-Raman spectra of the CVD diamond films with/without the APAP pretreatment, the surface morphology did exhibit quite significant variations.
引用
收藏
页码:169 / 174
页数:6
相关论文
共 50 条
  • [1] Investigation of ICP etching of CVD diamond film
    Chao, Choung-Lii
    Chou, Wen-Chen
    Chien, Chun-Yu
    Ma, Kung-Jenn
    Lin, Hung-Yi
    Wu, Tung-Chuan
    Journal of the Chinese Society of Mechanical Engineers, Transactions of the Chinese Institute of Engineers, Series C/Chung-Kuo Chi Hsueh Kung Ch'eng Hsuebo Pao, 2007, 28 (02): : 169 - 174
  • [2] THERMOCHEMICAL ETCHING EFFECT ON CVD DIAMOND FILM IN AN OXYGEN ATMOSPHERE
    UCHIDA, N
    KURITA, T
    UEMATSU, K
    SAITO, K
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1990, 9 (03) : 249 - 250
  • [3] THERMOCHEMICAL ETCHING EFFECT OF H2O VAPOR ON CVD DIAMOND FILM
    UCHIDA, N
    KURITA, T
    OHKOSHI, H
    UEMATSU, K
    SAITO, K
    JOURNAL OF CRYSTAL GROWTH, 1991, 114 (04) : 565 - 568
  • [4] Effects at reactive ion etching of CVD diamond
    Bello, I
    Fung, MK
    Zhang, WJ
    Lai, KK
    Wang, YM
    Zhou, ZF
    Yu, RKW
    Lee, CS
    Lee, ST
    THIN SOLID FILMS, 2000, 368 (02) : 222 - 226
  • [5] Effect of electrical spark discharging parameters on the etching of chemical vapor deposition (CVD) diamond film
    Zhang, F. L.
    Wang, C. Y.
    Guo, Z. N.
    Chen, J.
    MATERIALS AND MANUFACTURING PROCESSES, 2007, 22 (7-8) : 859 - 864
  • [6] Fabricating microstructures on CVD diamond film
    Chao, Choung-Lii
    Chou, Wen-Chen
    Lin, Wen-Chung
    Su, Wei-Jhe
    Ma, Kung-Jeng
    INTERNATIONAL JOURNAL OF SURFACE SCIENCE AND ENGINEERING, 2012, 6 (1-2) : 59 - 70
  • [7] Homoepitaxial growth of CVD diamond after ICP pretreatment
    Muchnikov, A. B.
    Vikharev, A. L.
    Butler, J. E.
    Chernov, V. V.
    Isaev, V. A.
    Bogdanov, S. A.
    Okhapkin, A. I.
    Yunin, P. A.
    Drozdov, Y. N.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (11): : 2572 - 2577
  • [8] Properties of CVD diamond film detector
    Wang Lan
    Ouyang Xiao-Ping
    Fan Ru-Yu
    Jin Yong-Jie
    Zhang Zhong-Bing
    Pan Hong-Bo
    Liu Lin-Yue
    Lue Fan-Xiu
    Bu Ren-An
    Liu De-Min
    HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2007, 31 (12): : 1112 - 1115
  • [9] CVD diamond film for neutron counting
    Hassard, J
    Liu, JH
    Mongkolnavin, R
    Colling, D
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 416 (2-3): : 539 - 542
  • [10] Selection of CVD diamond film substrates
    Fang, Lili
    Jingangshi yu Moliao Moju Gongcheng/Diamond and Abrasives Engineering, 2004, (03):