Epitaxial Pt films with different orientations grown on (100)Si substrates by RF magnetron sputtering

Epitaxial Pt films with (111) and (100) orientations were grown on Y2O3-stabilized ZrO2 (YSZ)-covered (100)Si substrates by RF sputtering. (I I I)Pt films were epitaxially grown on (100)YSZ//(100)Si substrates at 580 and 680 degrees C, but competitive crystal orientations of (111) and (100) at 780 degrees C. In contrast, a (100)-oriented epitaxial Pt film was grown at 550 degrees C on a (100)YSZ//(100)Si substrate with a (100)-oriented epitaxial (100)Ir buffer layer. This orientational control of epitaxial Pt films enables the epitaxial growth of perovskite layers with different orientations on thermally and chemically stable Pt bottom electrodes grown on (100)Si substrates.