Molecular-dynamic investigation of buckling of double-walled carbon nanotubes under uniaxial compression

被引:8
|
作者
Lu, Jian-Ming [1 ]
Wang, Yun-Che [3 ]
Chang, Jee-Gong [2 ]
Su, Ming-Horng [4 ]
Hwang, Chi-Chuan [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Engn Sci, Tainan 70101, Taiwan
[2] Natl Ctr High Performance Comp, Natl Appl Res Labs, Sinshih Township 74147, Tainan County, Taiwan
[3] Natl Cheng Kung Univ, Dept Civil Engn, Engn Mat Program, Tainan 70101, Taiwan
[4] WuFeng Inst Technol, Dept Fire Sci, Chiayi 621, Taiwan
关键词
molecular dynamics simulation; carbon nanotube; buckling; slenderness ratio;
D O I
10.1143/JPSJ.77.044603
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This paper studies the buckling phenomena and mechanical behavior of single-walled carbon nanotubes (SWNTs) and double-walled carbon nanotubes (DWNTs) via molecular dynamics simulations. The Tersoff interatomic C-C potential is adopted. Using a dimensionless parameter, slenderness ratio (S-R, the ratio of length to diameter), we investigate the mechanical behavior of long and short nanotubes under compression through their buckling modes, total strain energy and strain energy density, as well as post-buckling. The curvatures of strain energy provide a means to measure the Young's modulus of the nanotubes. Moreover, jumps in either the strain energy or strain energy density indicate identical mechanical buckling strains, and are studied in relation to buckling modes. In our simulations, a transition time is observed for short nanotubes to reach stable vase-like buckling mode, indicating a time-dependent property of nanotubes. Furthermore, nanotubes with small SR can bear higher compressive load after their first buckling. In addition, nanotubes with same chirality exhibit roughly the same elastic modulus, regardless of their lengths, when applied compressive strains are less than 5% strain. However, long nanotubes show smaller buckling strength. Effects of temperature at 300 K on buckling strength for SWNT are also discussed in connection to our present study at I K.
引用
收藏
页数:7
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