Characterization of N-in-N microstrip radiation detectors fabricated on different silicon substrates

被引：0

作者：

Fleta, C ^{[1
]}

Lozano, M ^{[1
]}

Campabadal, F ^{[1
]}

Pellegrini, G ^{[1
]}

Rafí, JM ^{[1
]}

Ullán, M ^{[1
]}

Casse, G ^{[1
]}

Allport, PP ^{[1
]}

机构：

[1] UAB, CSIC, CNM, IMB, Barcelona 08193, Spain

来源：

2005 Spanish Conference on Electron Devices, Proceedings | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

N-in-N microstrip radiation detectors have been fabricated at the IMB-CNM facilities on standard Float Zone, Diffusion Oxygenated Float Zone and magnetic Czochralski silicon substrates. A first electrical characterization shows that the devices have a good behavior, with low leakage currents and an average full depletion voltage of 55 V for the devices processed on Float Zone silicon and 330 V for those processed on Czochralski material.

引用

页码：513 / 516

页数：4

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