Wafer-Level Mapping of Plasma-Induced Charging Effect by ON-Chip In Situ Recorders in FinFET Technologies

被引：14

作者：

Tsai, Yi-Pei ^{[1
]}

Wu, Chun-Hsiung ^{[1
]}

Lin, Chrong Jung ^{[1
]}

King, Ya-Chin ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 06期

关键词：

Advanced fin-shaped field effect transistors (FinFET) technology; plasma-induced damage (PID); slot contact; INDUCED DAMAGE; OXIDE DAMAGE; GATE;

D O I：

10.1109/TED.2016.2552231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a novel approach for monitoring the wafer-level plasma-induced charging effect in advanced CMOS fin-shaped field effect transistor (FinFET) processes, and successfully demonstrate that ON-chip charge collectors, consisting of antenna-coupled floating gates (FGs), can record the plasma charging levels during back-end-of-the-line processes. The charge stored on these in situ recorders helps to project the actual potential on the transistor gates during plasma-charging stress. Wafer maps containing the potential distribution, as estimated by the level of positive and negative charging effects on the FGs, provide a powerful tool for future FinFET process optimization and yield additional insights for device reliability analysis.

引用

页码：2497 / 2502

页数：6