Model of the RHEED intensity oscillations based on reflectivity of the MBE grown surface

被引：2
|
作者：
Papajova, D [1 ]
Vesely, M [1 ]
机构：
[1] FEI STU, Dept Microelect, SK-81219 Bratislava, Slovakia
来源：
VACUUM | 1998年 / 49卷 / 04期
关键词：
D O I：
10.1016/S0042-207X(98)00003-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a new simple model of the Reflection High Energy Electron Diffraction (RHEED) intensity oscillations that are used experimentally to control epitaxial growth by Molecular Beam Epitaxy (MBE) and to study surface processes governing the MBE growth(1). The model is based on the change of the RHEED intensify according to the reflectivity of the surface morphology during the MBE growth. It was found that the change of the incident angle of an analyzing electron beam, governing the reflectivity of the grown surface, causes the phase shift of the RHEED intensity oscillations with respect to the layer growth. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：297 / 302
页数：6
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