Integration of phototransistors in CMOS circuits

被引：0
|
作者：
Calderer, J
Moreno, M
Braam, M
机构：
[1] UNIV POLITECN CATALUNYA, DEPT ELECTR ENGN, E-08071 BARCELONA, SPAIN
[2] UNIV TWENTE, DEPT ELECTR ENGN, ENSCHEDE, NETHERLANDS
来源：
SENSORS AND MATERIALS | 1996年 / 8卷 / 04期
关键词：
photosensor; phototransistor; ASIC; CMOS;
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A solution for integrating a photosensor in custom-designed digital circuits fabricated using conventional complementary metal-oxide-semiconductor (CMOS) technology is presented. In this approach, by starting with device characterization and parameterization, a method for designing sensor cells is developed. Experimental results obtained from a programmable sensitivity photosensor, such as optical gain, linearity, spectral sensitivity and response delay, are presented. The problem of crosstalk from cell integration in an array is also discussed.
引用
收藏
页码：199 / 208
页数：10
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