The target heating influence on the reactive magnetron sputtering process

被引：13
|
作者：
Bondarenko, A. [1 ]
Kolomiytsev, A. [1 ]
Shapovalov, V. [1 ]
机构：
[1] St Petersburg State Electrotech Univ LETI, 5 Prof Popov St, St Petersburg 194354, Russia
来源：
23RD INTERNATIONAL CONFERENCE ON VACUUM TECHNIQUE AND TECHNOLOGY | 2016年 / 729卷
关键词：
MODEL;
D O I：
10.1088/1742-6596/729/1/012006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A physicochemical model for the reactive magnetron sputtering of a "hot" target is described in this paper. The system consisting of eight algebraic equations was solved for a tantalum target sputtered in an O-2 environment. It was established that the hysteresis effect disappears with the increase of the ion current density.
引用
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页数：3
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