3-W broad area lasers and 12-w bars with conversion efficiencies up to 40% at 650 nm

被引：23

作者：

Sumpf, Bernd ^{[1
]}

Zorn, Martin ^{[1
]}

Staske, Ralf ^{[1
]}

Fricke, Joerg ^{[1
]}

Ressel, Peter ^{[1
]}

Ginolas, Arnim ^{[1
]}

Paschke, Katrin ^{[1
]}

Erbert, Goetz ^{[1
]}

Weyers, Markus ^{[1
]}

Traenkle, Guenther ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztechn, D-12489 Berlin, Germany

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2007年 / 13卷 / 05期

关键词：

continuous-wave (CW) lasers; laser reliability; red lasers; semiconductor lasers;

D O I：

10.1109/JSTQE.2007.903372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly efficient 650-mn high-power broad-area laser diodes and laser bars with single quantum well InGaP quantum wells embedded in AlGaInP waveguide layers, and n-AlInP and p-AlGaAs cladding layers are presented. Broad-area lasers that are 100-mu m wide reach output powers of 3 W and conversion efficiencies of about 40% at 15 degrees C. For 5-mm wide laser bars (filling factor of 20%), maximum output powers of 12 W in continuous-wave (CW) operation and 55 W in quasi-CW mode were obtained. Reliable operation of 5000 h at 800 mW for single emitters and at 5 W for laser bars will be reported.

引用

页码：1188 / 1193

页数：6

共 30 条

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[3] METAL-VAPOR IR LASERS WITH EMISSION POWER UP TO 12-W
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