On Resonant Scatterers As a Factor Limiting Carrier Mobility in Graphene

被引：209

作者：

Ni, Z. H. ^{[1
]}

Ponomarenko, L. A. ^{[1
]}

Nair, R. R. ^{[1
]}

Yang, R. ^{[1
]}

Anissimova, S. ^{[1
]}

Grigorieva, I. V. ^{[1
]}

Schedin, F. ^{[1
]}

Blake, P. ^{[1
]}

Shen, Z. X. ^{[2
]}

Hill, E. H. ^{[1
]}

Novoselov, K. S. ^{[1
]}

Geim, A. K. ^{[1
]}

机构：

[1] Univ Manchester, Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

[2] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore

来源：

NANO LETTERS | 2010年 / 10卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

Graphene; mobility; scattering mechanism; Raman; RAMAN-SPECTROSCOPY; TRANSPORT;

D O I：

10.1021/nl101399r

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We show chat graphene deposited on a substrate has a non-negligible density of atomic scale defects This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of similar to 1 % with respect to the G peak We evaluated the effect of such impurities on electron transport by mimicking them with hydrogen adsorbates and measuring the induced changes in both mobility and Raman intensity If the intervalley scatterers responsible for the D peak are monovalent, their concentration is sufficient to account for the limited mobilities currently achievable in graphene on a substrate

引用

页码：3868 / 3872

页数：5

共 50 条

[1] Charge Transport in Graphene with Resonant Scatterers
Titov, M.
Ostrovsky, P. M.
Gornyi, I. V.
Schuessler, A.
Mirlin, A. D.
PHYSICAL REVIEW LETTERS, 2010, 104 (07)
[2] Diffusion and Criticality in Undoped Graphene with Resonant Scatterers
Ostrovsky, P. M.
Titov, M.
Bera, S.
Gornyi, I. V.
Mirlin, A. D.
PHYSICAL REVIEW LETTERS, 2010, 105 (26)
[3] Metallic proximity effect in ballistic graphene with resonant scatterers
Titov, M.
Ostrovsky, P. M.
Gornyi, I. V.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (03)
[4] Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation
Wu, Zhangting
Luo, Zhongzhong
Shen, Yuting
Zhao, Weiwei
Wang, Wenhui
Nan, Haiyan
Guo, Xitao
Sun, Litao
Wang, Xinran
You, Yumeng
Ni, Zhenhua
NANO RESEARCH, 2016, 9 (12) : 3622 - 3631
[5] Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation
Zhangting Wu
Zhongzhong Luo
Yuting Shen
Weiwei Zhao
Wenhui Wang
Haiyan Nan
Xitao Guo
Litao Sun
Xinran Wang
Yumeng You
Zhenhua Ni
Nano Research, 2016, 9 : 3622 - 3631
[6] Cloaking resonant scatterers and tuning electron flow in graphene
Oliver, Diego
Garcia, Jose H.
Rappoport, Tatiana G.
Peres, N. M. R.
Pinheiro, Felipe A.
PHYSICAL REVIEW B, 2015, 91 (15)
[7] Magnetic moments and Kondo effect near vacancies and resonant scatterers in graphene
Haase, P.
Fuchs, S.
Pruschke, T.
Ochoa, H.
Guinea, F.
PHYSICAL REVIEW B, 2011, 83 (24)
[8] Electronic structure and quantum transport in twisted bilayer graphene with resonant scatterers
Namarvar, Omid Faizy
Missaoui, Ahmed
Magaud, Laurence
Mayou, Didier
de Laissardiere, Guy Trambly
PHYSICAL REVIEW B, 2020, 101 (24)
[9] Neutral scatterers dominate carrier transport in CVD graphene with ionic impurities
Chen, Szu-Hua
Nguyen, Yen
Chen, Ting -Wei
Yen, Zhi-Long
Hofmann, Mario
Hsieh, Ya-Ping
CARBON, 2020, 165 : 163 - 168
[10] New effects in graphene with high carrier mobility
Morozov, S. V.
PHYSICS-USPEKHI, 2012, 55 (04) : 408 - 412

← 1 2 3 4 5 →