Responsivity of multiple quantum well structures, grown by MOCVD at normal incidence

The success in the area of multiple quantum well (MQW) devices development have been achieved mainly due to employment of molecular beam epitaxy (MBE). However at the same time for MQW growing metalorganic chemical vapor deposition (MOCVD) is used, because of its more high productivity. Our experience in MOCVD grown MQW and photodetectors based on them shows, that they have some differences from MBE grown analogs. These differences are: more high asymmetry of current-voltage characteristics, considerable responsivity at normal incidence. We believe, that differences mentioned above are related with features of MOCVD. In this report we present experimental results of reponsivity investigation of MOCVD grown MQW, relation between experimental results and MOCVD grown MQW features is discussed.