EXAFS measurements for liquid Ge-Si alloys

被引:5
|
作者
Inui, M [1 ]
Matsusaka, T
Ishikawa, D
Sakaguchi, Y
Hong, XG
Kazi, MH
Tamura, K
机构
[1] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 7398521, Japan
[2] Hiroshima Univ, Grad Sch Biosphere Sci, Higashihiroshima 7398521, Japan
关键词
local structure; EXAFS measurements at high temperature; liquid Ge-Si alloys;
D O I
10.1107/S0909049500016058
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
EXAFS measurements around the Ge-K edge have been carried out for liquid Ge-Si alloys for the first time to investigate the local structure around a Ge atom. To perform the EXAFS measurements for the liquid alloys with high melting temperatures, a new sapphire cell have been developed. The measurements were carried out for the liquid alloys from 10% to 60% of Si and the crystalline ones from 10% to 70% of Si as a reference. EXAFS oscillations, x(k), are observed even at 1480 degreesC for liquid Ge0.4Si0.6. The position of the first peak in the radial distribution function obtained from Fourier transform of x(k) is shifted towards smaller distance for liquid and crystalline alloys with increasing Si concentration. The results of a curve-fit analysis in a harmonic approximation show that Ge-Ge and Ge-Si bonds in the liquid alloys become long with increasing Si concentration while those become slightly short in the crystalline ones.
引用
收藏
页码:767 / 769
页数:3
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